Recently, China Nengxun Microelectronics Co., Ltd. issued the first order to AIXTRON to purchase the ASI Strong Coupling Sprinkler @(CCS)CRIUS@ MOCVD system for the production of nitrided semiconductor electronic devices. The system will be the first system in China to specialize in the production of gallium nitride (GaN) electronic devices.
The AIXTRON system will be used to grow gallium nitride and related nitride semiconductor epitaxial layers on silicon carbide and silicon substrates to produce microwave and power devices. Currently, the system has been installed and debugged and ready to use. For the production of high quality GaN epitaxial chips.
Compared to traditional silicon devices, GaN electronic devices enable superior efficiency and power density performance for high frequency (RF) and power electronics applications. However, in practice, it is necessary to overcome two major difficulties: First, there is a serious lattice mismatch between gallium nitride and a heterogeneous substrate, so its growth must be handled by special procedures; second, in order to compete with silicon devices. The manufacturing cost must be reduced as much as possible, which requires the most advanced MOCVD technology to provide high consistency and reproducibility.
Dr. Zhang Naiqian, President and CEO of Nexun Microelectronics, commented: "High-power and high-efficiency GaN-based devices are important components of next-generation power management and data communications. This disruptive technology will help us achieve The sustainable development of society. Ai Siqiang reactor has proven to be a well-deserved choice for the entire production."
Dr. Frank Wischmeyer, Vice President and Power Electronics Project Manager of AIXTRON, said: “The technical team of Nexus Microelectronics has extensive experience in the application of ASI's CCS technology. We hope to support them through our expertise. , thereby accelerating the pace of GaN power devices entering the Chinese market."
The AIXTRON system will be used to grow gallium nitride and related nitride semiconductor epitaxial layers on silicon carbide and silicon substrates to produce microwave and power devices. Currently, the system has been installed and debugged and ready to use. For the production of high quality GaN epitaxial chips.
Compared to traditional silicon devices, GaN electronic devices enable superior efficiency and power density performance for high frequency (RF) and power electronics applications. However, in practice, it is necessary to overcome two major difficulties: First, there is a serious lattice mismatch between gallium nitride and a heterogeneous substrate, so its growth must be handled by special procedures; second, in order to compete with silicon devices. The manufacturing cost must be reduced as much as possible, which requires the most advanced MOCVD technology to provide high consistency and reproducibility.
Dr. Zhang Naiqian, President and CEO of Nexun Microelectronics, commented: "High-power and high-efficiency GaN-based devices are important components of next-generation power management and data communications. This disruptive technology will help us achieve The sustainable development of society. Ai Siqiang reactor has proven to be a well-deserved choice for the entire production."
Dr. Frank Wischmeyer, Vice President and Power Electronics Project Manager of AIXTRON, said: “The technical team of Nexus Microelectronics has extensive experience in the application of ASI's CCS technology. We hope to support them through our expertise. , thereby accelerating the pace of GaN power devices entering the Chinese market."
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