STMicroelectronics' 600W - 250V RF Transistron uses the latest high voltage technology to achieve smaller, more reliable performance

Crystal oscillator

3225 50M crystal

ST 's 13.6MHz RF power transistor STAC250V2-500E has market-leading stability and high power density. It is available in a high-output, ultra-high-package package for use in E-class industrial power supplies with high output power.

The load-mismatch rate of the STAC250V2-500E is 20:1, which is at the highest level in the market and the maximum safe power is up to 600W. The 0.55x1.35" STAC? air-cavity package reduces product size by approximately 50% compared to solutions in traditional ceramic packages. The two STAC250V2-500E transistors have a smaller footprint than a ceramic transistor and can be designed for small power supplies above 1 kW. The chamber package reduces the thermal resistance by 25%, which helps to improve the operational reliability of the transistor.

The product advantages of the STAC250V2-500E ensure superior performance in targeted applications, including induction heaters, plasma-enhanced vapor-deposition systems, and solar cell and flat panel TV manufacturing equipment.

The STAC250V2-500E uses ST's latest SuperDMOS high-voltage technology with a maximum operating voltage of 250V. The breakdown voltage above 900V ensures an E-ductive resonant circuit or a Class D power amplifier. Amplifier) ​​Stability of other applications.

The STAC250V2-500E is currently in volume production and is available in a STAC177 package.

For more information on the STAC250V2-500E, please visit http://