Most silicon ESD protection solutions on the market today are designed for consumer electronics, but ESD threats can also make automotive electronics designers unsuccessful. What makes car electronics designers deeply worried is not only the “normal†ESD situation, but other car-specific events are also an important cause of sleepiness, such as short-circuit (STB).
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A car battery short circuit event can occur during assembly, repair, or use of the device by the consumer in the vehicle. During assembly and repair, disconnected or bare battery cords may be connected to any interface and as a result may damage the ESD protection device. A typical example of a battery short-circuit event that occurs during consumer use is that the USB cable falls into the car cigarette lighter socket, bringing the battery line voltage into the interface line. The presence of a 12V battery network in the automotive environment would itself place an additional burden on the vehicle's ESD protection devices, as these devices would need to be addressed by someone who intentionally or unintentionally shorts these interfaces with battery lines. Therefore, if the interface is subject to such a short circuit condition in addition to the ESD threat, a 5V conventional breakdown ESD device mainly used for consumer electronics is not suitable.
The automotive-grade ESD protection device developed by ON Semiconductor combines the off-state voltage and current-limit capability to easily handle battery short-circuit and ground short-circuit (STG) events. In addition to these features, the device meets high-speed ESD protection requirements such as low insertion loss, high bandwidth, and ultra-low capacitance that are critical to signal integrity.
ESD protection devices (such as SZESD7361, SZESD7462, SZESD7102, and SZESD1L001) have a minimum breakdown voltage of 16V and can withstand automotive battery short-circuit conditions at a minimum of 9V and a maximum battery voltage of 16V. These devices offer low-clamp ESD protection and ultra-low capacitance for operation over the GHz frequency range.
Devices such as the NIV1161 and NIV2161 have the same ESD protection silicon as the previous devices, while integrating small-signal MOSFETs for current-limiting functions, providing short-circuit and short-to-ground protection for SoCs. These integrated MOSFETs feature low Rds(on) for applications with gigabits per second high data rates.
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